Informations

Stand number

K95

Exhibition class

C: Electronics – Electricity – Methods of communication – Electrical network

Technical description

A p-GaN THME with a 2D MoS₂ barrier improves electronic mobility and stress engineering. It operates up to 82V (gate) and 131V (drain), delivers 7.3W at V_DS = 8V, exhibits I_ON/I_OFF~10⁶, R_ON/R_OFF~10-⁶ with a threshold of 0.85V.

Simplified description

An electronic device uses a special material to improve the movement of electrons and resist stress. It operates efficiently at high voltage levels. It can produce 7.3 watts of power at a specific voltage and has good on/off performance.